概览
描述
The R1RP0408D Series is a 4Mbit high-speed static RAM organized 512-k word × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 36-pin plastic SOJ.
特性
- Single 5.0V supply: 5.0V ± 10%
- Access time: 12ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 130mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max), 1.0mA (max) (L-version)
- Data retention current: 0.5mA (max) (L-version)
- Data retention voltage: 2.0V (min) (L-version)
- Center VCC and VSS type pinout
产品对比
应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 400 KB 日本語 | |
| 指南 | PDF 207 KB 日本語 | |
| 指南 | PDF 1.27 MB 日本語 | |
| 产品可靠性报告 | PDF 202 KB | |
| 产品可靠性报告 | PDF 202 KB | |
| 产品变更通告 | PDF 1.04 MB 日本語 | |
| 产品变更通告 | PDF 885 KB 日本語 | |
| 宣传手册 | PDF 3.28 MB | |
| 封装外形图 | PDF 21 KB | |
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9 项目
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