概览
描述
The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
特性
- Single 5.0 V supply: 5.0 V ± 10 %
- Access time: 10ns /12ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 170mA/160mA (max)
- TTL standby current: 40 mA (max)
- CMOS standby current: 5 mA (max)
- Center VCC and VSS type pin out
- Temperature range: ?40 to +85°C
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