封装信息
| Pkg. Code | pkg_11787 |
| Lead Count (#) | 44 |
| Pkg. Type | TSOP(44) |
| Pkg. Dimensions (mm) | 18.41 x 10.16 x 1.2 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| RoHS (R1RP0416DSB-0PI#D1) | 英语日文 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Price (USD) | 4.59057 |
| Access Time (ns) | 10 |
| Bus Width (bits) | 16 |
| Core Voltage (V) | 5 |
| Density (Kb) | 4096 |
| I/O Voltage (V) | 5 - |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 18 |
| Longevity | 2032 12月 |
| MOQ | 1 |
| Memory Capacity (kbit) | 4000 |
| Organization | 256K x 16 |
| Organization (bit) | x 16 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 10 x 1.2 |
| Pkg. Type | TSOP(44) |
| Replacement Remark | Back-end site & assembly material change |
| Supply Voltage (V) | 4.5 - 5.5 |
| Tape & Reel | No |
| Thickness (mm) | 1.2 |
| Width (mm) | 10 |
有关 R1RP0416D-I 的资源
描述
The R1RP0416DI is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.