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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | μSO8-FL |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 3.30 x 3.50 x 0.85 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | μSO8-FL |
| Lead Count (#) | 8 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 930 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 20 |
| Id max @ 25°C (A) | 20 |
| Lead Compliant | No |
| MOQ | 3000 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 37 |
| Pkg. Dimensions (mm) | 3.30 x 3.50 x 0.85 |
| Qg typ (nC) | 16 |
| Qualification Level | Automotive |
| RDS (ON) (Max) @10V or 8V (mohm) | 21 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 18.1 |
| Series Name | REXFET-1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Tape & Reel | No |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
有关 RBA20N10EANS-5UA21 的资源
描述
RBA20N10EANS-5UA21 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 μSO8-FL(3x3) 封装。相较于传统DPAK，超紧凑封装尺寸减少约90%，有助于节省电路板空间并提升设计灵活性。此外，其采用可润湿侧翼引脚，提供卓越的可焊性并支持可靠的光学检测。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景，是大功率和高频应用的理想选择。