特性
- Super low on-state resistance
- RDS(on) = 0.85 mΩ MAX. (VGS = 10 V, ID = 125A)
- Low input capacitance
- Ciss = 12900pF TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
- Pb-free (This product does not contain Pb in the external electrode)
描述
The RBA250N04AHPF-4UA01 is an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263-7 / D2PAK-7 |
| Gate Level | Standard |
| VDSS (Max) (V) | 40 |
| ID (A) | 250 |
| RDS (ON) (Max) @10V (mohm) | 0.85 |
| Pch (W) | 348 |
| Ciss (Typical) (pF) | 12900 |
| Qg typ (nC) | 245 |
| Series Name | ANL3 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZU | 10 x 9 x 4.65 | 7 |
应用方框图
 | 电子助力转向系统 瑞萨电子提供经 ASIL-D 认证的产品，例如用于电动助力转向系统的 PMIC 和 MCU。 |