封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | Bare |
| Pkg. Code: | |
| Lead Count (#): | |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0040 |
| RoHS (RBA500N10EHWT-2UA01#GFH) | 英语日文 |
| Pb (Lead) Free | Yes |
产品属性
| Pkg. Type | Bare |
| Standard Pkg. Type | Bare die |
| Carrier Type | Embossed Tape |
| Automotive Qual. | _none |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 34000 |
| Country of Assembly | JAPAN |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 500 |
| Id max @ 25°C (A) | 500 |
| Lead Compliant | Yes |
| MOQ | 1 |
| Nch/Pch | Nch |
| Pb (Lead) Free | Yes |
| Qg typ (nC) | 450 |
| Qualification Level | Automotive |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 0.54 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Tape & Reel | Yes |
| Thickness (mm) | 1 |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
有关 RBA500N10EHWT-2UA01 的资源
描述
REXFET-1 100V 技术采用分离栅极结构，可提供低导通电阻。 它减少了电容和栅极电荷，以实现更高效的开关。 得益于该技术，MOSFET可实现高开关速度和低功耗，从而提高能源效率。 此外，它还增强了耐用性和可靠性，使其适用于汽车应用，如电源管理系统、电机控制和 DC-DC 转换器。
