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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TOLG |
| Pkg. Code: | |
| Lead Count (#): | 9 |
| Pkg. Dimensions (mm): | 9.90 x 11.70 x 2.50 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | TOLG |
| Standard Pkg. Type | TOLG |
| Lead Count (#) | 9 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 13000 |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 340 |
| Id max @ 25°C (A) | 340 |
| Lead Compliant | No |
| MOQ | 1500 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pb (Lead) Free | Yes |
| Pch (W) | 468 |
| Pkg. Dimensions (mm) | 9.90 x 11.70 x 2.50 |
| Price (USD) | $2.27204 |
| Qg typ (nC) | 170 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V or 8V (mohm) | 1.5 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 1.3 |
| Series Name | REXFET-1 |
| Tape & Reel | No |
| VDSS (Max) (V) | 100 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
有关 RBE015N10R1SZPV 的资源
描述
RBE015N10R1SZPV N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 TOLG 封装。 TOLG 封装具有与 TOLL 封装同样的外形和尺寸。但其采用海鸥翼式引脚设计，具备卓越的热循环能力。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景，是大功率和高频应用的理想选择。