封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | uSO8-FL |
| Pkg. Code: | |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 3.3 x 3.3 x 0.85 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) | 8541.29.0095 |
| RoHS (RBE093N08R1SZN2#HB0) | 英语日文 |
产品属性
| Pkg. Type | uSO8-FL |
| Lead Count (#) | 8 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 1800 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 50 |
| Id max @ 25°C (A) | 50 |
| Lead Compliant | No |
| Length (mm) | 3.3 |
| MOQ | 3000 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 57 |
| Pkg. Dimensions (mm) | 3.3 x 3.3 x 0.85 |
| Qg typ (nC) | 28 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V (mohm) | 9.3 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 7.9 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Tape & Reel | No |
| Thickness (mm) | 0.85 |
| VDSS (Max) (V) | 80 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Width (mm) | 3.3 |
有关 RBE093N08R1SZN2 的资源
描述
RBE093N08R1SZN2 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 μSO8-FL(3x3) 封装。μSO8-FL(3x3) 封装采用超紧凑无引脚设计和可润湿侧翼结构，可增强热性能和可靠性并提高组装的便利性。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关性能的场景，是大功率和高频应用的理想选择。
