特性
- Nch/Pch: Nch
- Number of channels: Single
- Automotive: YES
- VDSS (V): 60
- ID (A): 40
- RDS (ON) (mohm) max. @4V to 4.5V: 25
- RDS (ON) (ohm) typ. @4V to 4.5V: 17
- RDS (ON) (mohm) max. @8V to 10V: 19
- RDS (ON) (ohm) typ. @8V to 10V: 12
- Pch (W): 50
- Tsd (°C) typ: 175
- Package Type: LDPAK(S)(1)
- AEC-Q101 Compliant
Thermal FET Function
描述
The RJF0408JPD is an N channel MOSFET for body lighting heater, power train, and 24V applications. It has built-in overheat protection functions and can function as a thermal FET.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-252 / DPAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 40 |
| ID (A) | 30 |
| RDS (ON) (Max) @10V (mohm) | 25 |
| Pch (W) | 30 |
| Series Name | Thermal FETs |
封装选项
| Pkg. Type | Lead Count (#) |
|---|---|
| DPAK(S) | 4 |
应用
- Body lighting heater
- Power train application
- 24V automotive electronic equipment
| Part Number | Status | Samples | Stock | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|
| RJF0408JPD-00#J3 | Active | N/A | Out of Stock | DPAK(S) | 4# | Embossed Tape | 1 | Yes | |||
| RJF0408JPD-01#J3 | Active | Available | In Stock | DPAK(S) | 1ku | $0.956 | 4# | Embossed Tape | 1 | Yes | MALAYSIA | JAPAN |
加载中
- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- 产品可靠性报告英语PDF 193 KB APR-24-H0366 2024年12月27日
- 应用说明英语AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- 应用说明英语AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
- 数据手册英语
- 数据手册英语
推荐文档 (1)
- 数据手册英语
数据手册 (1)
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
手册和指南 (1)
- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 应用说明英语AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
- 应用说明英语AI 生成的摘要: The document outlines derating standards for Power MOSFETs and IGBTs, emphasizing temperature, humidity, voltage, current, and power limits to ensure device reliability. It discusses package type selection between hermetic sealed and plastic molded types, highlighting the advantages of surface-mount packages for miniaturization. It also details precautions for physical handling, including proper lead forming, cutting, and mounting techniques to prevent stress and damage during installation.
应用说明和白皮书 (4)
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
- 产品可靠性报告英语PDF 193 KB APR-24-H0366 2024年12月27日
质量和可靠性 (1)
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
营销资料 (1)
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
No Results Found.
检查拼写
确保所有关键词拼写正确。
确保所有关键词拼写正确。
调整关键词
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
尝试使用更少、不同或更宽泛的词语来改变搜索结果。
查看筛选器
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
如果您使用了筛选器，请考虑取消选择某些筛选器选项以扩大搜索结果。
需要帮助？
- 搜索我们丰富的知识库，帮助您解答常见问题
- 前往支持论坛，获取瑞萨电子技术专家和社群的帮助
