特性
- Logic level (4V) driven power MOSFET
- Built-in overheat cutoff circuit enables power MOSFET protection in high-temperature conditions
- Improved resistance to load short circuits
- The overheat cutoff method is a latch type. After the overheat cutoff circuit operates, it will return to zero bias with the gate voltage
- Built-in current limiting circuit
- The power supply voltage is 12V or 24V
- AEC-Q101 compliant
描述
The RJF0605JPV is a power switch MOSFET that can control ON/OFF between drain and source by applying voltage to the gate. The gate of the power MOSFET has a built-in overheat cutoff circuit, which protects against abnormal ambient temperature rises, overpower, and overcurrent. It has the function of protecting the power MOSFET by gate cutoff operation against the heat generated by the MOSFET.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-252 / DPAK |
| VDSS (Max) (V) | 60 |
| ID (A) | 20 |
| RDS (ON) (Max) @10V or 8V (mohm) | 38 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 50 |
| Pch (W) | 40 |
| Series Name | Thermal FETs |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-3ZK | 6 x 6 x 2.65 | 3 |
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