封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TO-220FPA |
| Pkg. Code: | pkg_11786 |
| Lead Count (#): | 3 |
| Pkg. Dimensions (mm): | |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | TO-220FPA |
| Lead Count (#) | 3 |
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Application | Inverter |
| Channels (#) | 1 |
| Configuration | Built-in FRD |
| FRD Vf (V) | 1.4 |
| FRD trr (ns) | 70 |
| IC @100 °C (A) | 10 |
| IC @25 °C (A) | 20 |
| IH | No |
| Ic (Peak) (A) | 40 |
| Inverter | Yes |
| Lead Compliant | No |
| MOQ | 1 |
| Mounting Type | Through Hole |
| PFC | No |
| Pc (W) | 30 |
| Qg typ (nC) | 13 |
| Series Name | 60Dx Series |
| Strobe | No |
| Tape & Reel | No |
| VCE (sat) (V) | 1.9 |
| VCES (V) | 600 |
| tf (Typical) (µs) | 0.075 |
| tsc (μs) | 3 |
有关 RJH60D1DPP-A0 的资源
描述
Renesas' RJH60D1DPP-A0 600V, 10A insulated-gate bipolar transistors (IGBT) featuring trench gate and thin wafer technology, built-in fast recovery diode (100ns typ.) in one package, and low collector to emitter saturation voltage can be used for power switching applications.
