特性
- Low on-resistance
RDS(on) = 0.036 Ω typ. (at ID = 22.5 A, VGS = 10 V, Ta = 25°C) - Low leakage current
- High speed switching
描述
MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness.
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