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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community

特性

  • Fast Recovery Diode technology
  • Low forward voltage VF = 1.8V typ. (at IF = 150A, Tj = 25°C)
  • Low Switching loss
  • Easy paralleling by internal Rg

描述

Renesas' Fast Recovery Diodes (FRD) achieve low forward voltage and fast and soft recovery characteristics with ultra-thin wafer and lifetime control technology. This 1200V/150A diode is optimized for high-power applications such as inverters.

应用

  • High speed switching
Part NumberStatusSamplesStockPackage
RJU1C06DWA-00#W0ObsoleteN/AOut of StockWafer
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