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瑞萨电子 (Renesas Electronics Corporation)
1200V - 200A – Fast Recovery Diode

封装信息

CAD 模型:View CAD Model
Pkg. Type:Wafer
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):
Pitch (mm):

环境和出口类别

Moisture Sensitivity Level (MSL)
Pb (Lead) FreeNo
ECCN (US)
HTS (US)

产品属性

Pkg. TypeWafer
ApplicationInverter
Elements S: Single D: DoubleS
IF (A)200
IR (Max) (µA)100
IR at VR (μA)100
Lead CompliantNo
MOQ1
Pb (Lead) FreeNo
Qualification LevelIndustrial
Simulation Model AvailableYes
Tj (°C)175
VF (Max)2.3
VRM (V)1200

描述

Renesas' Fast Recovery Diodes (FRD) achieve low forward voltage and fast and soft recovery characteristics with ultra-thin wafer and lifetime control technology. This 1200V/200A diode is optimized for high-power applications such as inverters.