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1200V - 200A – Fast Recovery Diode

封装信息

Pkg. Type Wafer

环境和出口类别

ECCN (US) 5A002
Moisture Sensitivity Level (MSL)
Pb (Lead) Free No
HTS (US)

产品属性

Pkg. Type Wafer
Application Inverter
Elements S: Single D: Double S
IF (A) 200
IR (Max) (µA) 100
IR at VR (μA) 100
Lead Compliant No
MOQ 1
Pb (Lead) Free No
Qualification Level Industrial
Simulation Model Available Yes
Tj (°C) 175
VF (Max) 2.3
VRM (V) 1200

描述

Renesas' Fast Recovery Diodes (FRD) achieve low forward voltage and fast and soft recovery characteristics with ultra-thin wafer and lifetime control technology. This 1200V/200A diode is optimized for high-power applications such as inverters.