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4Mb Advanced LPSRAM (256-kword × 16-bit)

封装信息

Pkg. Code pkg_11787
Lead Count (#) 44
Pkg. Type TSOP(44)
Pkg. Dimensions (mm) 18.41 x 10.16 x 1.2

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) 3A991
HTS (US) 8542.32.0041
RoHS (RMLV0416EGSB-4S2#AA1) 英语日文
Pb (Lead) Free Yes

产品属性

Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Price (USD) | 1ku 3.11296
Access Time (ns) 45
Density (Kb) 4000
Lead Compliant Yes
Lead Count (#) 44
Length (mm) 18
Longevity 2032 12月
MOQ 1
Memory Capacity (kbit) 4000
Memory Density 4M
Organization 256K x 16
Organization (bit) x 16
Organization (kword) 256
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 10 x 1.2
Pkg. Type TSOP(44)
Remarks Dual Chip Select (CS1#, CS2)
Replacement Remark Back-end site change etc
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range -40 to +85°C
Thickness (mm) 1.2
Width (mm) 10

描述

The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array.