封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(2) |
| Pkg. Code: | pkg_1574 |
| Lead Count (#): | 44 |
| Pkg. Dimensions (mm): | 18.41 x 10.16 x 1.2 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| RoHS (RMLV0416EGSB-4S2#HA0) | 英语日文 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 3 |
| Access Time (ns) | 45 |
| Density (Kb) | 4000 |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 18 |
| MOQ | 1000 |
| Memory Capacity (kbit) | 4000 |
| Memory Density | 4M |
| Organization | 256K x 16 |
| Organization (bit) | x 16 |
| Organization (kword) | 256 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 18 x 10 x 1.2 |
| Pkg. Type | TSOP(2) |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Product | RMLV0416EGSB-4S2#HA1 |
| Supply Voltage (V) | 2.7 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1.2 |
| Width (mm) | 10 |
有关 RMLV0416E 的资源
描述
The RMLV0416E is a 4-Mbit static RAM organized as 262, 144-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0416E realizes higher density, higher performance, and low-power consumption. The RMLV0416E device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 44-pin TSOP (II) or 48-ball fine-pitch ball grid array.