跳转到主要内容
8Mb Advanced LPSRAM (512k word × 16bit / 1024k word x 8bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:TSOP(48)
Pkg. Code:pkg_11788
Lead Count (#):48
Pkg. Dimensions (mm):18 x 12 x 1.2
Pitch (mm):0.5

环境和出口类别

Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041
RoHS (RMLV0816BGSA-4S2#KA0)英语日文
Pb (Lead) FreeYes

产品属性

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, MALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)45
Density (Kb)8000
Lead CompliantYes
Lead Count (#)48
Length (mm)18
Longevity2032 十二月
MOQ1000
Memory Capacity (kbit)8000
Memory Density8
Organization512K x 16
Organization (bit)x 8 / x 16
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 12 x 1.2
Pkg. TypeTSOP(48)
Price (USD)$5.57106
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkChange in generation from 0.15 um to 0.11 um
Supply Voltage (V)2.4 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)12

描述

The RMLV0816BGSA is an 8-Mbit static RAM organized 524, 288-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV0816BGSA realizes higher density, higher performance, and low-power consumption. The RMLV0816BGSA offers low power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I) package.