特性
- Single 3V supply: 2.4V to 3.6V
- Access time: Power supply voltage from 2.7V to 3.6V: 45ns (max.) Power supply voltage from 2.4V to 2.7V: 55ns (max.)
- Current consumption: Standby: 0.45µA (typ.)
- Equal access and cycle times
- Common data input and output Three state output
- Directly TTL compatible All inputs and outputs
- Battery backup operation
描述
The RMLV0816BGSD is a family of 8Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’ high-performance Advanced LPSRAM technologies. The RMLV0816BGSD realizes higher density, higher performance, and low power consumption. The RMLV0816BGSD offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 52-pin µTSOP (II).
产品参数
| 属性 | 值 |
|---|---|
| Memory Density | 8M |
| Organization | 512K x 16 |
| Access Time (ns) | 45 |
| Supply Voltage (V) | - |
| Temp. Range (°C) | -40 to +85 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| TSOP(2) | 11 x 9 x 1 | 52 |