封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TSOP(2) |
| Pkg. Code: | pkg_11889 |
| Lead Count (#): | 52 |
| Pkg. Dimensions (mm): | 11 x 9 x 1 |
| Pitch (mm): | 0.4 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tray |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 45 |
| Density (Kb) | 8000 |
| Lead Compliant | Yes |
| Lead Count (#) | 52 |
| Length (mm) | 11 |
| MOQ | 1 |
| Memory Capacity (kbit) | 8000 |
| Memory Density | 8 |
| Organization | 512K x 16 |
| Organization (bit) | x 8 / x 16 |
| Organization (kword) | 1000 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 11 x 9 x 1 |
| Pkg. Type | TSOP(2) |
| Price (USD) | $5.64786 |
| Remarks | Dual Chip Select (CS1#, CS2) |
| Replacement Remark | Assembly site transfer to serve the objective of stable supply |
| Supply Voltage (V) | 2.4 - 3.6 |
| Tape & Reel | No |
| Temp. Range (°C) | -40 to +85 |
| Thickness (mm) | 1 |
| Width (mm) | 9 |
有关 RMLV0816BGSD 的资源
描述
The RMLV0816BGSD is a family of 8Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’ high-performance Advanced LPSRAM technologies. The RMLV0816BGSD realizes higher density, higher performance, and low power consumption. The RMLV0816BGSD offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is offered in 52-pin µTSOP (II).
