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封装信息

Pkg. Type TSOP(48)
Pkg. Code pkg_11788
Lead Count (#) 48
Pkg. Dimensions (mm) 18.4 x 12 x 1.2

环境和出口类别

Moisture Sensitivity Level (MSL) 3
HTS (US) 85423245000
RoHS (RMLV1616AGSA-5U2#AA0) 英语日文
Pb (Lead) Free Yes
ECCN (US)

产品属性

Longevity 1999 1月
Pkg. Type TSOP(48)
Carrier Type Tray
Moisture Sensitivity Level (MSL) 3
Country of Assembly Taiwan
Country of Wafer Fabrication Japan
Access Time (ns) 55
Density (Kb) 16000
Lead Compliant Yes
Lead Count (#) 48
Length (mm) 18
MOQ 1
Memory Capacity (kbit) 16000
Memory Density 16M
Organization 1M x 16
Organization (bit) x 8 / x 16
Organization (kword) 2000
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 18 x 12 x 1.2
Remarks Dual Chip Select (CS1#, CS2)
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range -40 to +85°C
Thickness (mm) 1.2
Width (mm) 12

描述

The RMLV1616A-U Series is a family of 16Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.

The RMLV1616A-U Series realizes higher soft error immunity compared to typical SRAMs with on-chip ECC, achieved by Renesas’ unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.

It is offered in a 48-pin TSOP (I) or 48-ball fine pitch ball grid array.