特性
- Ultra-low standby current consumption:
- ~25°C: 0.5μA (typ.)/3μA (max.)
- ~85°C: 4.5μA (typ.)/8μA (max.)
- High-speed access time: 45ns/55ns (max.)
- Higher soft error immunity (< 0.04 FIT/Mb)*1 compared to typical SRAMs with on-chip ECC
- Single 3V supply: 2.7V to 3.6V
- Organized 1,048,576-word × 16-bit (48-pin TSOP (I) also configurable as 2,097,152-word × 8-bit)
- Easy memory expansion by CS1# and CS2
- No clocks/No refresh
- Common data input and output
- Three-state output - Directly TTL compatible
- All inputs and outputs
- Battery backup operation
- Available in Pb-free and RoHS applicable packages
Note *1. Based on an accelerated test that complies with JEDEC standard JESD89A. Contact us for details.
RMLV1616A-U Block Diagram
描述
The RMLV1616A-U Series is a family of 16Mbit asynchronous SRAMs organized 1,048,576-word × 16-bit.
The RMLV1616A-U Series realizes higher soft error immunity compared to typical SRAMs with on-chip ECC, achieved by Renesas’ unique Advanced LPSRAM technologies. Therefore, it is suitable for battery backup systems.
It is offered in a 48-pin TSOP (I) or 48-ball fine pitch ball grid array.
产品参数
| 属性 | 值 |
|---|---|
| Memory Density | 16 |
| Organization | 1M x 16 |
| Access Time (ns) | 55 |
| Supply Voltage (V) | 2.7 - 3.6 |
| Temp. Range (°C) | -40 to +85 |
