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16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit)

封装信息

Pkg. Code pkg_11618
Lead Count (#) 48
Pkg. Type FBGA(48)
Pkg. Dimensions (mm) 8.5 x 7.5 x 1.2

环境和出口类别

Moisture Sensitivity Level (MSL) 3
ECCN (US) 5A002
HTS (US) 8542.32.0041
RoHS (RMLV1616AGBG-5S2#KC0) 英语日文
Pb (Lead) Free Yes

产品属性

Carrier Type Embossed Tape
Moisture Sensitivity Level (MSL) 3
Country of Assembly China, Japan, Taiwan
Country of Wafer Fabrication Japan
Price (USD) | 1ku 7.4875
Access Time (ns) 55
Density (Kb) 16000
Lead Compliant Yes
Lead Count (#) 48
Length (mm) 8
Longevity 2032 12月
MOQ 1000
Memory Capacity (kbit) 16000
Memory Density 16M
Organization 1M x 16
Organization (bit) x 16
Organization (kword) 1000
Pb (Lead) Free Yes
Pkg. Dimensions (mm) 8 x 8 x 1.2
Pkg. Type FBGA(48)
Remarks Dual Chip Select (CS1#, CS2)
Replacement Remark Change in generation from 0.15 um to 0.11 um
Supply Voltage (V) 2.7 - 3.6
Tape & Reel No
Temp. Range -40 to +85°C
Thickness (mm) 1.2
Width (mm) 8

描述

The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array.