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16Mb Advanced LPSRAM (1M word × 16-bit / 2M word x 8-bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:TSOP(1)
Pkg. Code:pkg_11788
Lead Count (#):48
Pkg. Dimensions (mm):18.4 x 12 x 1.2
Pitch (mm):0.5

环境和出口类别

Moisture Sensitivity Level (MSL)3
RoHS (RMLV1616AGSA-5S2#AA0)英语日文
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Carrier TypeTray
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA, TAIWAN, MALAYSIA
Country of Wafer FabricationJAPAN
Access Time (ns)55
Density (Kb)16000
Lead CompliantYes
Lead Count (#)48
Length (mm)18
Longevity2032 12月
MOQ1
Memory Capacity (kbit)16000
Memory Density16
Organization1M x 16
Organization (bit)x 8 / x 16
Organization (kword)2000
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 12 x 1.2
Pkg. TypeTSOP(48)
Price (USD)$9.2746
RemarksDual Chip Select (CS1#, CS2)
Replacement RemarkChange in generation from 0.15 um to 0.11 um
Supply Voltage (V)2.7 - 3.6
Tape & ReelNo
Temp. Range (°C)-40 to +85
Thickness (mm)1.2
Width (mm)12

描述

The RMLV1616A is a 16-Mbit static RAM organized as 1, 048, 576-word × 16-bit, fabricated by Renesas' high-performance Advanced LPSRAM technologies. The RMLV1616A realizes higher density, higher performance, and low-power consumption. The device offers low-power standby power dissipation. Therefore, it is suitable for battery backup systems. It is offered in a 48-pin TSOP (I), 52-pin µTSOP (II), or 48-ball fine-pitch ball grid array.