封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | FCLGA |
| Pkg. Code: | FL0008AB |
| Lead Count (#): | 8 |
| Pkg. Dimensions (mm): | 5 x 6 x 0.702 |
| Pitch (mm): | 1.27 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | EAR99 |
| HTS (US) | 8541.29.0095 |
| RoHS (RTP100E1P2G1FL-DSC-TR) | 英语日文 |
| Pb (Lead) Free |
产品属性
| Pkg. Type | FCLGA |
| Carrier Type | Tape & Reel |
| Moisture Sensitivity Level (MSL) | 3 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -40 to +150°C |
| Assembly Location | CHINA |
| Wafer Fab Location | Taiwan |
| Blocking Capability | Uni-Directional Switch |
| Ciss (Typical) (pF) | 3666 |
| Coss (Typical) (pF) | 950 |
| FET Type | E-mode GaN |
| IDS (A) @ Ta = 25°C | 57 |
| IDS (A) @ Tc = 25°C | 545 |
| Id max @ 25°C (A) | 52 |
| Lead Count (#) | 8 |
| Pkg. Dimensions (mm) | 5 x 6 x 0.702 |
| Price (USD) | $1.9 |
| Qg typ (nC) | 27 |
| Qoss (nC) | 86 |
| Qualification Level | Standard |
| Quality Level | Standard |
| RDSON (Typ) (mΩ) | 1.2 |
| RDSON (max) (mΩ) | 1.6 |
| Ron * Qoss (FOM) | 103.2 |
| Theta-JA (°C/W) | 18.4 |
| V(TR)DSS max (V) | 120 |
| Vds min (V) | 100 |
| Vth typ (V) | 1.1 |
有关 RTP100E1P2G1FL-DSC 的资源
描述
RTP100E1P2G1FL-DSC 是一款 100V、1.2mΩ 增强型（e-mode）氮化镓（GaN）场效应管（FET），基于瑞萨电子第一代 REXGaN® 平台打造，采用 5mm × 6mm 双面散热（DSC）FCLGA 封装。 该器件采用先进的封装技术，将超快开关性能与增强的热特性相结合，可实现高效率、高功率密度的设计。 其双面散热封装和与硅器件兼容的占位面积，简化了从传统硅 MOSFET 向 GaN 技术的迁移，有助于缩短开发时间、改善热管理并降低整体功耗。