概览
描述
The TP70H480G4JSG 700V 480mΩ Gallium Nitride (GaN) FET, housed in a 5x6 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating, to deliver exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.
特性
- 480mOhm, 700V GaN Device in PQFN 5x6 performance package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- 2kV HBM ESD rating
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
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应用
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| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 732 KB | |
| 应用说明 | PDF 372 KB | |
| 应用说明 | PDF 639 KB | |
| 应用说明 | PDF 3.39 MB | |
| 应用说明 | PDF 1.26 MB | |
| 其他 | ZIP 50 KB | |
| 指南 | PDF 225 KB | |
| 指南 | PDF 273 KB | |
| 指南 | PDF 391 KB | |
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