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概览

描述

The TP70H480G4JSG 700V 480mΩ Gallium Nitride (GaN) FET, housed in a 5x6 PQFN performance package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating, to deliver exceptional performance, standard drive compatibility, ease of adoption, and enhanced reliability.

特性

  • 480mOhm, 700V GaN Device in PQFN 5x6 performance package
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by:
    • 800V transient over-voltage capability
    • Operation with E-mode Gate drivers without the need for Zener protection
    • 2kV HBM ESD rating
  • Low QRR
  • Reduced crossover loss
  • Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
    • Increased power density
    • Reduced system size and weight
    • Overall reduction in system cost

产品对比

应用

文档

类型 文档标题 日期
数据手册 PDF 732 KB
应用说明 PDF 372 KB
应用说明 PDF 639 KB
应用说明 PDF 3.39 MB
应用说明 PDF 1.26 MB
其他 ZIP 50 KB
指南 PDF 225 KB
指南 PDF 273 KB
指南 PDF 391 KB
9 items

设计和开发

软件与工具

软件下载

类型 文档标题 日期
PCB 设计文件 ZIP 2.70 MB
1 item

模型

ECAD 模块

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Diagram of ECAD Models

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