特性
- Super low on-state resistance
RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A)
RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) - High current rating: ID(DC) = ±110 A
描述
The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-263 / D2PAK |
| Gate Level | Logic |
| VDSS (Max) (V) | 60 |
| ID (A) | 110 |
| RDS (ON) (Max) @10V (mohm) | 2.8 |
| RDS (ON) (Max) @4.5V (mohm) | 3.7 |
| Pch (W) | 213 |
| Ciss (Typical) (pF) | 16800 |
| Qg typ (nC) | 250 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-25ZP | 10 x 9 x 4.9 | 3 |
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