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5.0V 128K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout

封装信息

Lead Count (#) 32
Pkg. Code PBG32
Pitch (mm) 1.27
Pkg. Type SOJ
Pkg. Dimensions (mm) 20.9 x 10.2 x 2.2

环境和出口类别

Pb (Lead) Free Yes
ECCN (US) NLR
HTS (US) 8542320041
Moisture Sensitivity Level (MSL) 3

产品属性

Lead Count (#) 32
Pb (Lead) Free Yes
Carrier Type Reel
Price (USD) | 1ku 2.70714
Access Time (ns) 12
Architecture Asynchronous
Bus Width (bits) 8
Core Voltage (V) 5
Density (Kb) 1024
I/O Voltage (V) 5 - 5
Length (mm) 20.9
MOQ 1000
Moisture Sensitivity Level (MSL) 3
Organization 128K x 8
Package Area (mm²) 213.2
Pb Free Category e3 Sn
Pitch (mm) 1.27
Pkg. Dimensions (mm) 20.9 x 10.2 x 2.2
Pkg. Type SOJ
Qty. per Carrier (#) 0
Qty. per Reel (#) 1000
Reel Size (in) 13
Requires Terms and Conditions Does not require acceptance of Terms and Conditions
Tape & Reel Yes
Temp. Range 0 to 70°C
Thickness (mm) 2.2
Width (mm) 10.2

描述

The 71124 5V CMOS SRAM is organized as 128K x 8. The JEDEC centerpower/GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71124 are TTL-compatible and operation is from a single 5V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.