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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
2.5V 1M x 18 ZBT Synchronous 2.5V I/O Flow-through SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:PBGA
Pkg. Code:BGG119
Lead Count (#):119
Pkg. Dimensions (mm):14.0 x 22.0 x 2.15
Pitch (mm):1.27

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)119
Pb (Lead) FreeYes
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureZBT
Bus Width (bits)18
Core Voltage (V)2.5
Cycle Time (ns)85
Density (Kb)18432
I/O Voltage (V)2.5 - 2.5
Length (mm)14
MOQ84
Organization1024K x 18
Output TypeFlowthrough
Package Area (mm²)308
Pb Free Categorye1 SnAgCu
Pitch (mm)1.27
Pkg. Dimensions (mm)14.0 x 22.0 x 2.15
Pkg. TypePBGA
Qty. per Carrier (#)84
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)2.15
Width (mm)22

描述

The 71T75902 2.5V CMOS Synchronous SRAM organized as 1M x 18 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround.