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3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM

封装信息

CAD 模型:View CAD Model
Pkg. Type:CABGA
Pkg. Code:BQ165
Lead Count (#):165
Pkg. Dimensions (mm):15.0 x 13.0 x 1.2
Pitch (mm):1

环境和出口类别

Pb (Lead) FreeNo
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)165
Pb (Lead) FreeNo
Carrier TypeTray
Moisture Sensitivity Level (MSL)3
ArchitectureSynch Burst
Bus Width (bits)18
Core Voltage (V)3.3
Density (Kb)9216
I/O Voltage (V)3.3 - 3.3
Length (mm)15
MOQ136
Organization512K x 18
Output TypePipelined
Package Area (mm²)195
Pb Free Categorye0
Pitch (mm)1
Pkg. Dimensions (mm)15.0 x 13.0 x 1.2
Pkg. TypeCABGA
Qty. per Carrier (#)136
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)-40 to 85°C
Thickness (mm)1.2
Width (mm)13

描述

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.