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瑞萨电子 (Renesas Electronics Corporation) - June is Pride Month, a month to raise awareness of the rights and the culture of the LGBTQ+ community
1 Mbit Ultra-low Energy Serial Flash Memory

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOIC-N
Pkg. Code:
Lead Count (#):
Pkg. Dimensions (mm):3.81 x 4.80
Pitch (mm):1.27

环境和出口类别

Moisture Sensitivity Level (MSL)3
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Sample Catalog申请样品
Pkg. TypeSOIC-N
Carrier TypeTape & Reel
Moisture Sensitivity Level (MSL)3
Country of AssemblyCHINA
Country of Wafer FabricationCHINA
Deep Power Down (µA)0.1
Flash by TaskBoot Loader, Datalogging, Execute-in-Place, System Settings
InterfaceSingle, Dual, Quad SPI
Key Benefit90% energy savings
Longevity2033 一月
MOQ12000
Memory ClassUltra-Low Energy
Memory Density1
Operating Voltage Range (V)1.65 - 3.6
Pb (Lead) FreeYes
Pitch (mm)1.27
Pkg. Dimensions (mm)3.81 x 4.80
Price (USD)$0.24086
Qty. per Reel (#)4000
Read Current (mA)1.2
Speed85 MHz
Temp. Range (°C)-40 to +85°C
Vcc (V)1.65-3.6

描述

The AT25EU001A is the lowest energy member of our System Enhancing class of code and data storage solutions designed for all system memory tasks including boot/code shadowing and small byte load updates. It is universally compatible and combines low power with faster Read performance to save more than 70% energy.