特性
- Electrically Screened to SMD # 5962-95686
- QML Qualified per MIL-PRF-38535 Requirements
- High Slew Rate 50V/µs (Min), 65V/µs (Typ)
- Wide Power Bandwidth 750kHz (Min)
- Low Offset Current 25nA (Min), 10nA (Typ)
- High Input Impedance 50MΩ (Min), 100MΩ (Typ)
- Wide Small Signal Bandwidth 12MHz (Typ)
- Fast Settling Time (0.1% of 10V Step) 250ns (Typ)
- Low Quiescent Supply Current 6mA (Max)
- Internally Compensated For Unity Gain Stability
- Total Gamma Dose 10kRAD(Si)
描述
Support is limited to customers who have already adopted these products.
The HS-2510RH is a radiation hardened high performance operational amplifier which set the standard for maximum slew rate and wide bandwidth operation in moderately powered, internally compensated, monolithic devices. In addition to excellent dynamic characteristics, this dielectrically isolated amplifier also offers low offset current and high input impedance. The ±50V/ms minimum slew rate and fast settling time of the HS-2510RH are ideally suited for high speed D/A, A/D, and pulse amplification designs. The HS-2510RH superior bandwidth and 750kHz minimum full power bandwidth are extremely useful in RF and video applications. To insure compliance with slew rate and transient response specifications, all devices are 100% tested for AC performance characteristics over full temperature limits. To improve signal conditioning accuracy, the HS-2510RH provides a maximum offset current of 25nA and a minimum input impedance of 50MΩ, both at 25°C, as well as offset voltage trim capability. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95686. A hot-link is provided on our homepage for downloading.
应用
- Data Acquisition Systems
- RF Amplifiers
- Video Amplifiers
- Signal Generators
- Pulse Amplification
| Part Number | Status | Samples | Stock | Package | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | DLA SMD | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | CAGE code |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| HS7B-2510RH-Q | Obsolete | N/A | Out of Stock | SBDIP | 8# | Box | Not Applicable | 2.5mm | 9.9 x 7.4 x 2.41 | 5962-95686 | Exempt | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
| HS9-2510RH-Q | Obsolete | N/A | Out of Stock | CFP | 14# | Tray | Not Applicable | 1.3mm | 9.5 x 6.3 x 0.00 | 5962-95686 | Yes | Gold Plate over compliant Undercoat-e4 | 25 | -55 to +125°C | 34371 |
- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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- 应用说明英语PDF 263 KB r13an0003eu0100-biasing-op-amps 2019年12月06日AI 生成的摘要: Proper biasing of operational amplifiers is essential to avoid malfunction in AC-coupled circuits. A missing DC bias path causes long stabilization times and potential failures. Adding input resistors to ground provides a DC path for bias currents, minimizing offset errors. For single-supply AC-coupled amplifiers, biasing uses a reference voltage, ideally from a high-PSRR voltage reference or buffered voltage divider, to maintain signal symmetry and reduce noise. Understanding frequency responses of input and feedback components is crucial for setting bandwidth and gain characteristics.
- 应用说明英语PDF 338 KB an9867 1999年11月10日AI 生成的摘要: Electrical parameters are monitored during life testing to detect drift and failures, defined by exceeding datasheet limits. New products require less than 1% failure during burn-in, with failure analysis and corrective actions if exceeded. Sampling plans ensure defect rates below 3%. Life tests last 1000-3000 hours at 125°C depending on process maturity. Failure mechanisms include electromigration, ionic contamination, hot carrier injection, and dielectric rupture. Product sign-off requires all parties' approval after reliability confirmation. Space products undergo burn-in and quality conformance inspections with strict failure limits. Derating is unnecessary as datasheet limits are set at 6-sigma from characterization data, ensuring reliability.
- 应用说明英语PDF 224 KB an9654 1999年5月05日AI 生成的摘要: The document explains the reliability and failure mechanisms of semiconductor parts, focusing on life testing and wearout. It discusses how switching states cause transient current pulses and hot carrier injection, which only occur briefly during switching. Life testing at elevated temperatures accelerates aging to remove infant mortality failures, improving reliability. The failure rate follows a bathtub curve with infant mortality, useful life, and wearout phases, modeled by lognormal and exponential distributions. The Arrhenius equation relates failure rates at different temperatures. Burn-in and life tests reduce early failures without harming intrinsic reliability.
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