特性
- QML Class T, per MIL-PRF-38535
- Radiation performance
- Gamma dose 1 x 105 RAD(Si)
- No latch-up, SEU LET >100MeV/mg/cm2
- Transient output upset >5 x 108 RAD (Si)/s
- Fast access time - 35ns (Typical)
- Single 5V power supply, synchronous operation
- Single pulse 10V field programmable NiCr fuses
- On-chip address latches, three-state outputs
- Low standby current <500µA (Pre-Rad)
- Low operating current <15mA/MHz
- Electrically screened to SMD # 5962-95626
描述
The Intersil Satellite Applications Flow™ (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers while maintaining a high level of reliability. The Intersil HS-6664RH-T is a radiation hardened 64K CMOS PROM, organized in an 8K word by 8-bit format. The chip is manufactured using a radiation hardened CMOS process and utilizes synchronous circuit design techniques to achieve high-speed performance with very low power dissipation. On-chip address latches are provided, allowing easy interfacing with microprocessors that use a multiplexed address/data bus structure. The output enable control simplifies system interfacing by allowing output data bus control in addition to the chip enable control. All bits are manufactured storing a logical 0 and can be selectively programmed for a logical 1 at any bit location.
