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瑞萨电子 (Renesas Electronics Corporation)
Radiation Hardened 12V Half-Bridge GaN FET Driver

封装信息

CAD 模型:View CAD Model
Pkg. Type:QFN
Pkg. Code:LAG
Lead Count (#):20
Pkg. Dimensions (mm):5.0 x 5.0 x 0.90
Pitch (mm):0.7

环境和出口类别

Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
ECCN (US)EAR99
HTS (US)8542.39.0090
RoHS (ISL71441SLHMRZ)下载

产品属性

Pkg. TypeQFN
Lead Count (#)20
Carrier TypeTray
Moisture Sensitivity Level (MSL)1
Pb (Lead) FreeYes
Pb Free CategoryNickel/Palladium/Gold-Silver - e4
MOQ25
Temp. Range (°C)-55 to +125°C
CAGE code34371
Bus Voltage (Max) (V)12
DSEE (MeV·cm2/mg)86
Die Sale Availability?No
Driver TypeHalf Bridge
Drivers (#)2
FET TypeGaNFET
Fall Time25
FlowRH Plastic
Gate Drive (V)4.5
High Side Fall Time (max) (ns)25
High Side Rise Time (max) (ns)25
Input VCC (Max) (V)13.2
Input VCC (Min) (V)4.75
Length (mm)5
Low Side Fall Time (max) (ns)30
Low Side Rise Time (max) (ns)34
Models AvailablePSPICE, ISIM
Output TypeSynchronous
PROTO Availability?No
Peak Output Sink Current (A)4 (HS) /8 (LS)
Peak Output Source Current (A)2 (HS) /4 (LS)
Peak Sink Current (A)4A, 8A
Peak Source Current (A)2A, 4A
Pitch (mm)0.7
Pkg. Dimensions (mm)5.0 x 5.0 x 0.90
Qualification LevelPEMS
RatingSpace
Rise Time (Max)26
Supply Voltage (V)4.75 - 13.2
TID LDR (krad(Si))75
Thickness (mm)0.9
Turn-On Prop Delay (ns)29
Width (mm)5

描述

The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.