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Radiation Hardened 12V Half-Bridge GaN FET Driver

封装信息

Lead Count (#) 20
Pkg. Type QFN
Pkg. Code LAG
Pitch (mm) 0.65
Pkg. Dimensions (mm) 5.00 x 5.00 x 0.90

环境和出口类别

Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
RoHS (ISL71441SLHMRZ) 下载
ECCN (US)
HTS (US)

产品属性

Pkg. Type QFN
Lead Count (#) 20
Carrier Type Tray
Moisture Sensitivity Level (MSL) 1
Pb (Lead) Free Yes
Pb Free Category Nickel/Palladium/Gold-Silver - e4
MOQ 25
Temp. Range -55 to +125°C
CAGE code 34371
Bus Voltage (Max) (V) 12
DSEE (MeV·cm2/mg) 86
Die Sale Availability? No
Driver Type Half Bridge
Drivers (#) 2
FET Type GaNFET
Fall Time 25
Flow RH Plastic
Gate Drive (V) 4.5 - 5.5
High Side Fall Time (max) (ns) 25
High Side Rise Time (max) (ns) 25
Input VCC (Max) (V) 13.2
Input VCC (Min) (V) 4.75
Length (mm) 5
Low Side Fall Time (max) (ns) 30
Low Side Rise Time (max) (ns) 34
Models Available PSPICE, ISIM
Output Type Synchronous
PROTO Availability? No
Peak Output Sink Current (A) 4 (HS) /8 (LS)
Peak Output Source Current (A) 2 (HS) /4 (LS)
Peak Sink Current (A) 4, 8
Peak Source Current (A) 2, 4
Pitch (mm) 0.7
Pkg. Dimensions (mm) 5.0 x 5.0 x 0.90
Qualification Level PEMS
Rating Space
Rise Time (Max) 26
Supply Voltage (V) 4.75 - 13.2
TID LDR (krad(Si)) 75
Thickness (mm) 0.9
Turn-On Prop Delay (ns) 29
Width (mm) 5

描述

The ISL71441SLH is a radiation hardened PWM input 12V half-bridge GaN FET driver that drives low rDS(ON) Gallium Nitride (GaN) FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.

The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low-voltage high-current FPGA and DSP digital core rails.