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ISL73020SEH

有效

40V, 65A Enhancement Mode GaN Power Transistor

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特性

  • Very low rDS(ON) 3.5mΩ (typical)
  • Ultra low total gate charge 19nC (typical)
  • Radiation acceptance testing
    • Low dose rate (0.01rad(Si)/s): 75krad(Si)
  • SEE hardness (see the SEE report for details)
    • SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
  • Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
    • Package area: 42mm2
  • Full military-temperature range operation
    • TA = -55°C to +125°C
    • TJ = -55°C to +150°C
查找Hi-Rel GaN FETs的其他产品
ISL70020SEH/ISL73020SEH Functional Diagram
ISL70020SEH/ISL73020SEH Functional Diagram

描述

The ISL73020SEH is a 40V N-channel enhancement mode GaN power transistor. This GaN FET has been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.

产品参数

属性值
RatingSpace
VDS (V)40
IDS (A)65
VGS(TH) (Max) (V)2.5
VGS (Max) (V)6
RDSON (Typ) (mΩ)3.5
Qg typ (nC)19
Thermal Resistance θJC (°C/W)3.1
Temp. Range (°C)-55 to +125°C
TID LDR (krad(Si))75
DSEE (MeV·cm2/mg)86
FlowRH Hermetic
Qualification LevelClass Ve, EM
Die Sale Availability?Yes
PROTO Availability?Yes

封装选项

Pkg. TypePkg. Dimensions (mm)Lead Count (#)
—0.0 x 0.0 x 0.00—
CLCC9.0 x 4.7 x 1.834
DIE——

应用

  • Switching regulation
  • Motor drives
  • Relay drives
  • Inrush protection
  • Down hole drilling
  • High reliability industrial
Part NumberStatusSamplesStockRoHSPackageLead Count (#)Carrier TypeMoisture Sensitivity Level (MSL)Qualification LevelPb (Lead) FreePb Free CategoryMOQTemp. Range (°C)CAGE code
ISL73020SEHL/PROTOActiveAvailableOut of StockContactCLCC4#TrayNot ApplicableEMYesGold Plate over compliant Undercoat-e41-55 to +125°C34371
ISL73020SEHMLActiveN/AIn StockContactCLCC4#TrayNot ApplicableClass VeYesGold Plate over compliant Undercoat-e425-55 to +125°C34371
ISL73020SEHMXActiveN/AOut of StockRoHS:EN
RoHS:JA
DIEClass VeNo100-55 to +125°C34371
ISL73020SEHX/SAMPLEActiveAvailableOut of StockContactPackageDie Waffle PackEMNoNot Applicable5-55 to +125°C34371
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筛选

    推荐文档 (1)

  1. 数据手册
    英语
    ISL70020SEH, ISL73020SEH Datasheet
    RECOMMENDED
    PDF 516 KB R34DS0007EU0106 Rev.1.06 2024年3月28日

    数据手册 (1)

  1. 数据手册
    英语
    ISL70020SEH, ISL73020SEH Datasheet
    RECOMMENDED
    PDF 516 KB R34DS0007EU0106 Rev.1.06 2024年3月28日

    手册和指南 (1)

  1. 手册 - 开发工具
    英语
    ISL70040SEHEV5Z Evaluation Board Manual
    PDF 1.06 MB R12UZ0061EU0101 Rev.1.01 2022年12月05日

    应用说明和白皮书 (3)

  1. 应用说明
    英语
    R34AN0001EU: GaN FET Current Increase Due to Heavy Ion Testing
    PDF 221 KB R34AN0001EU0101 Rev.1.01 2022年11月29日
    AI 生成的摘要: GaN FETs experience current increases due to heavy ion testing, but the occurrence of high-energy ions in geosynchronous orbit is extremely rare. Particles with LET of 43MeV impact a device roughly once every 83 years, and those with 86MeV once every 4500 years. Over a typical 20-year mission, current increases remain negligible, mostly in picoamps. Devices rated at 40V and 100V show no SEB, while 200V devices exhibit SEB at 200V and 86MeV. Overall, current increase from heavy ions is insignificant for mission durations.
  2. 白皮书
    英语
    Taking Advantage of GaN in Small Satellite “New Space” Applications
    PDF 470 KB taking-advantage-of-gan-in-small-satellite-applications 日本語 2019年4月10日
    The "New Space" movement enables the use of advanced commercial technologies in Low Earth Orbit satellite systems by shifting from long-lifetime redundancy to system-level redundancy. This paper explores how radiation-tolerant GaN FET drivers and PWM controllers support the adoption of GaN in space-based power applications, enabling higher efficiency and smaller board sizes through faster switching and improved gate performance.
  3. 白皮书
    英语
    Advantages of Using Gallium Nitride FETs in Satellite Applications
    PDF 548 KB advantages-of-using-gan-fets-in-satellite-applications 2018年2月10日
    Silicon FETs are nearing their theoretical performance limits in space and high-reliability applications. Gallium Nitride (GaN) FETs offer advantages in size, weight, and efficiency due to lower conduction and switching losses. This paper highlights the need for specialized gate drivers that limit voltage to safe levels for GaN devices, enabling wider adoption in demanding environments.

    原理图和设计文件 (1)

  1. PCB 设计文件
    英语
    ISL70040SEHEV5Z Design Files
    ZIP 912 KB isl70040sehev5zbom_design 2020年1月11日

    其他 (3)

  1. 报告
    英语
    ISL70020SEH. ISL73020SEH SEE Test Report
    PDF 524 KB R34ST0003EU0102 Rev.1.02 2024年3月28日
  2. 技术摘要
    英语
    R34TB0003EU: Renesas Radiation Hardened GaN FET Screening and QCI Flow
    PDF 332 KB R34TB0003EU0100 Rev.1.00 2023年2月13日
  3. 报告
    英语
    ISL70020SEH, ISL73020SEH Total Dose Test Report
    PDF 341 KB r34et0005eu-isl70020seh-3020seh-total-dose-test-report 2019年10月24日

Renesas Boards & Kits

ISL70040SEHEV5Z Radiation Hardened ISL70040SEH GaN FET Driver & ISL70020SEH GaN Power Transistor Evaluation Board
ISL70040SEHEV5Z 有效

Radiation Hardened ISL70040SEH GaN FET Driver & ISL70020SEH GaN Power Transistor Evaluation Platform (40V GaN FET)

The ISL70040SEHEV5Z evaluation platform is designed to evaluate the ISL70040SEH GaN FET driver alongside the ISL70020SEH GaN power transistor. The ISL70040SEH is designed to drive enhancement-mode Gallium Nitride (GaN) FETs in isolated topologies and boost-type configurations. The board operates... 阅读详情

推荐文档：
ISL70040SEHEV5Z Evaluation Board Manual
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筛选

模拟模型

    软件与工具 (1)

  1. PCB 设计文件
    英语
    ISL70040SEHEV5Z Design Files
    ZIP 912 KB isl70040sehev5zbom_design 2020年1月11日

    模拟模型 (1)

  1. 模型 - SPICE
    英语
    ISL70020SEH Spice Model
    ZIP 7 KB 2021年2月19日
ISLVERSALDEMO2Z Reference Design Board
ISLVERSALDEMO2Z

Power Management Reference Design for AMD Versal XQRVC1902

The ISLVERSALDEMO2Z board provides power management for the AMD Xilinx Space Grade Versal ACAP AI Core VC1902 using Renesas' radiation hardened power management devices. The Versal ACAP system requires various supply rails, including the core, digital, analog, and DDR memory. The ISLVERSALDEMO2Z... 阅读详情

推荐文档：
ISLVERSALDEMO2Z Design Files
ISLVERSALDEMO2Z Demonstration Board Manual
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