特性
- Independently Drives 4 N-Channel FETs in Half Bridge or Full Bridge Configurations
- Bootstrap Supply Max Voltage: 70VDC
- Drives a 1000pF Load in Free Air at +50°C with Rise and Fall Times of 15ns (typ)
- User-Programmable Dead Time from 0.1 to 4.5µs
- DIS (Disable) Overrides Input Control and Refreshes Bootstrap Capacitor when Pulled Low
- Input Logic Thresholds Compatible with 5V to 15V Logic Levels
- Shoot-Through Protection
- Undervoltage Protection
- Pb-Free Plus Anneal Available (RoHS Compliant)
描述
The ISL83202 is a medium-frequency H-Bridge FET driver capable of 1A (typ) of peak drive current that is designed to drive high- and low-side N-Channel MOSFETs in medium voltage applications. Optimized for PWM motor control and uninterruptible power supply systems, the ISL83202 enables simple and flexible bridge-based design. With typical input-to-output propagation delays as low as 25ns and with a user programmable dead-time range of 0. 1µs to 4. 5µs, the ISL83202 is ideal for switching frequencies up to 200kHz. The dead-time of the ISL83202 is programmable via a single resistor. The ISL83202's four independent driver control inputs (ALI, AHI, BLI, and BHI) allow driving of every possible switch combination except those that would cause a shoot-through condition. A global disable input, DIS, overrides input control and causes the ISL83202 to refresh the bootstrap capacitor when pulled low. Integrated undervoltage protection and shoot-through protection ensure reliable system operation. The ISL83202 is available in compact 16 Ld SOIC and 16 Ld PDIP packages and operates over the range of -55°C to +125°C.
产品参数
| 属性 | 值 |
|---|---|
| Bootstrap Supply Voltage (Max) (V) | 70 |
| VBIAS (Max) (V) | 15 |
| Peak Pull-up Current (A) | 1 |
| Peak Pull-down Current (A) | 1 |
| Turn-On Prop Delay (ns) | 75 |
| Turn-Off Prop Delay (ns) | 55 |
| Rise Time (μs) | 0.009 |
| Fall Time | 9 |
| Input Logic Level | 3.3V/TTL |
| Temp. Range (°C) | -55 to +125°C |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) | Pitch (mm) |
|---|---|---|---|
| SOICN | 9.9 x 3.9 x 0.00 | 16 | 1.3 |
应用方框图
| 高性能 EV 冷却系统 先进的 EV 冷却系统可通过多功能高性能 MCU 提供高效热管理方案。 |
其他应用
- UPS Systems
- DC Motor Controls
- Full Bridge Power Supplies
- Switching Power Amplifiers
- Noise Cancellation Systems
- Battery Powered Vehicles
- Peripherals
- Medium/Large Voice Coil Motors
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| Part Number | Status | Samples | Longevity | Stock | RoHS | Package | Budgetary Price (USD) | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pitch (mm) | Pkg. Dimensions (mm) | Pb (Lead) Free | Pb Free Category | MOQ | Temp. Range (°C) | Country of Assembly | Country of Wafer Fabrication |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ISL83202IBZ | Active | Available | 2033 Dec | In Stock | RoHS:EN | SOIC | 1ku | $2.12 | 16# | Tube | 3 | 1.3mm | 9.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 960 | -55 to +125°C | CHINA | USA |
| ISL83202IBZT | Active | Available | 2033 Dec | Out of Stock | RoHS:EN | SOIC | 1ku | $2.12 | 16# | Reel | 3 | 1.3mm | 9.9 x 3.9 x 0.00 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 5000 | -55 to +125°C | CHINA | USA |
| ISL83202IPZ | Obsolete | N/A | 2033 Dec | In Stock | Contact | PDIP | 16# | Tube | Not Applicable | 2.5mm | 19.0 x 6.6 x 3.94 | Yes | Pb-Free 100% Matte Tin Plate w/Anneal-e3 | 1000 | -55 to +125°C |
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- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
- 产品变更通告英语PDF 86 KB PCN12086 2012年10月24日
- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
- 其他英语PDF 293 KB tb363 2018年5月04日
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- 应用说明英语PDF 397 KB an1684 2004年1月19日AI 生成的摘要: The document outlines important legal disclaimers and usage guidelines for semiconductor products. It emphasizes user responsibility for product design and safety, disclaims liability for damages, and clarifies no intellectual property licenses are granted. Products are categorized by quality grades with specific application recommendations. Users must comply with laws, avoid unauthorized modifications, and ensure safe use within specified conditions. Contact details for Renesas Electronics sales offices worldwide are provided.
- 应用说明英语PDF 509 KB an1681 2004年1月19日AI 生成的摘要: The document explains grounding techniques for PCB layouts using a dual op amp example on a single-layer copper board. It compares three grounding schemes: a center spine ground trace, an outer ground plane, and a split/star ground plane, highlighting the benefits of single-point grounding to minimize noise and antenna effects. It emphasizes following current paths, minimizing loop lengths, and ensuring close forward and return paths to reduce interference. The document also includes disclaimers on product use, quality grades, safety, and legal compliance.
- 应用说明英语PDF 576 KB an1116 2004年1月05日AI 生成的摘要: The document details various CMOS driver circuits including a self-powered DC stable 100V half bridge driver using EL7972 and EL7501, an IGBT half bridge driver with EL7981, and a self-oscillating IGBT driver operating at 25kHz. It also covers a 40W 12V synchronous step-down regulator using EL7761, a simple undervoltage lockout circuit using zener diodes, and a video sync pulse generator with EL7501. Additionally, it explains a resonant gate driver circuit that boosts gate voltage swing and improves efficiency by using external diodes and inductors.
应用说明和白皮书 (3)
- 产品变更通告英语PDF 152 KB PCN12085 2012年11月07日
- 产品变更通告英语PDF 86 KB PCN12086 2012年10月24日
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