特性
- Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
- Low input capacitance Ciss = 5000 pF TYP.
描述
The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Pch |
| Channels (#) | 1 |
| Standard Pkg. Type | TO-252 / DPAK |
| Simulation Model Available | Yes |
| VDSS (Max) (V) | -60 |
| ID (A) | -50 |
| RDS (ON) (Max) @10V or 8V (mohm) | 16.5 |
| RDS (ON) (Max) @ 4V or 4.5V or 5V (m ohm) | 23 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 13.2 |
| Pch (W) | 84 |
| Vgs (off) (Max) (V) | -2.5 |
| VGSS (V) | 20 |
| Ciss (Typical) (pF) | 5000 |
| Qg typ (nC) | 100 |
| Mounting Type | Surface Mount |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| MP-3ZK | 6 x 6 x 2.65 | 3 |
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