3.0kW Inverter GaN Evaluation Platform
The TDINV3000W050B 3.0kW inverter evaluation kit provides an easy way to evaluate the performance advantages of our SuperGaN FETs in various inverter applications, such...
TP65H050G4WS 650V 50mΩ 氮化镓 (GaN) FET 是使用我们的 GenIV 平台构建的常闭器件。 它将最先进的高压 GaN HEMT 与低压硅 MOSFET 相结合,以提供卓越的可靠性和性能。
瑞萨电子的 GaN 功率产品通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷,提供比硅更高的效率。
TP65H050G4WS 采用行业标准的 3 引脚 TO-247 封装,具有通用源极封装配置。
The TDINV3000W050B 3.0kW inverter evaluation kit provides an easy way to evaluate the performance advantages of our SuperGaN FETs in various inverter applications, such...
The TDINV3000W050 3.0kW inverter evaluation kit provides an easy way to evaluate the performance advantages of GaN FETs in various inverter applications, such as solar...
Schematic symbols, PCB footprints, and 3D CAD models from SamacSys can be found by clicking on products in the Product Options table. If a symbol or model isn't available, it can be requested directly from the website.
Pkg. Type |
Carrier Type |
Moisture Sensitivity Level (MSL) |
Mounting Type |
Temp. Range |
购买 / 样片 |
|
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器件号 | ||||||
TO-247 | Tube | 3 | Through Hole | -55 to +150°C |