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4M High-Speed SRAM (256-kword × 16-bit)

封装信息

CAD 模型:View CAD Model
Pkg. Type:TSOP(44)
Pkg. Code:pkg_11787
Lead Count (#):44
Pkg. Dimensions (mm):18 x 10 x 1.2
Pitch (mm):0.8

环境和出口类别

Moisture Sensitivity Level (MSL)3
RoHS (R1RP0416DSB-2PR#S1)英语日文
Pb (Lead) FreeYes
ECCN (US)
HTS (US)

产品属性

Carrier TypeEmbossed Tape
Moisture Sensitivity Level (MSL)3
Country of AssemblyMALAYSIA, TAIWAN
Country of Wafer FabricationJAPAN
Access Time (ns)12
Bus Width (bits)16
Core Voltage (V)5V
Density (Kb)4096
I/O Voltage (V)5
Lead CompliantYes
Lead Count (#)44
Length (mm)18
Longevity2032 十二月
MOQ1000
Memory Capacity (kbit)4000
Organization256K x 16
Organization (bit)x 16
Pb (Lead) FreeYes
Pkg. Dimensions (mm)18 x 10 x 1.2
Pkg. TypeTSOP(44)
Price (USD)$4.72428
Replacement RemarkBack-end site & assembly material change
Supply Voltage (V)4.5 - 5.5
Tape & ReelNo
Thickness (mm)1.2
Width (mm)10

描述

The R1RP0416D Series is a 4Mbit high-speed static RAM organized as 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. It is packaged in a 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.