概览
描述
The R1RW0408D is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408D is packaged in 400-mil 36-pin SOJ for high-density surface mounting.
特性
- Single supply: 3.3V ± 0.3V
- Access time: 10ns /12ns (max)
- Completely static memory: No clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible: All inputs and outputs
- Operating current: 115mA/100mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max), 0.8 mA (max) (L-version)
- Data retention current: 0.4mA (max) (L-version)
- Data retention voltage: 2V (min) (L-version)
- Center VCC and VSS type pinout
产品对比
应用
文档
相关文档
请登录后开启订阅
|
|
|
|
|---|---|---|
| 类型 | 文档标题 | 日期 |
| 数据手册 | PDF 395 KB 日本語 | |
| 指南 | PDF 207 KB 日本語 | |
| 指南 | PDF 1.27 MB 日本語 | |
| 产品可靠性报告 | PDF 202 KB | |
| 产品可靠性报告 | PDF 202 KB | |
| 产品变更通告 | PDF 1.04 MB 日本語 | |
| 产品变更通告 | PDF 885 KB 日本語 | |
| 宣传手册 | PDF 3.28 MB | |
| 封装外形图 | PDF 21 KB | |
|
9 项目
|
||
设计和开发
产品选项
当前筛选条件
