封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | SOJ |
| Pkg. Code: | pkg_475 |
| Lead Count (#): | 44 |
| Pkg. Dimensions (mm): | 28 x 10 x 3.55 |
| Pitch (mm): | 1.27 |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 3 |
| ECCN (US) | 3A991.b.2.a |
| HTS (US) | 8542.32.0041 |
| Pb (Lead) Free | Yes |
产品属性
| Carrier Type | Tube |
| Moisture Sensitivity Level (MSL) | 3 |
| Country of Assembly | TAIWAN |
| Country of Wafer Fabrication | JAPAN |
| Access Time (ns) | 12 |
| Bus Width (bits) | 16 |
| Core Voltage (V) | 3.3V |
| Density (Kb) | 4096 |
| I/O Voltage (V) | 3.3 |
| Lead Compliant | Yes |
| Lead Count (#) | 44 |
| Length (mm) | 28 |
| MOQ | 1 |
| Memory Capacity (kbit) | 4000 |
| Organization | 256K x 16 |
| Organization (bit) | x 16 |
| Pb (Lead) Free | Yes |
| Pkg. Dimensions (mm) | 28 x 10 x 3.55 |
| Pkg. Type | SOJ |
| Price (USD) | $4.95111 |
| Remarks | Contact us for Successor Products information. |
| Supply Voltage (V) | 3 - 3.6 |
| Tape & Reel | No |
| Thickness (mm) | 3.55 |
| Width (mm) | 10 |
有关 R1RW0416D-I 的资源
描述
The R1RW0416DI is a 4Mbit high-speed static RAM organized 256-kword × 16-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory, and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0416DI is packaged in s 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high-density surface mounting.
