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封装信息
| CAD 模型: | View CAD Model |
| Pkg. Type: | TOLT |
| Pkg. Code: | |
| Lead Count (#): | 16 |
| Pkg. Dimensions (mm): | 10 x 15 x 2 |
| Pitch (mm): |
环境和出口类别
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| ECCN (US) | |
| HTS (US) |
产品属性
| Pkg. Type | TOLT |
| Lead Count (#) | 16 |
| Carrier Type | Embossed Tape |
| Moisture Sensitivity Level (MSL) | 1 |
| Pb (Lead) Free | Yes |
| Channels (#) | 1 |
| Ciss (Typical) (pF) | 18000 |
| Country of Assembly | CHINA |
| Country of Wafer Fabrication | JAPAN |
| Function | Power MOSFETs |
| Gate Level | Standard |
| ID (A) | 360 |
| Id max @ 25°C (A) | 360 |
| Lead Compliant | No |
| Length (mm) | 10 |
| MOQ | 1300 |
| Mounting Type | Surface Mount |
| Nch/Pch | Nch |
| Pch (W) | 535 |
| Pkg. Dimensions (mm) | 10 x 15 x 2 |
| Qg typ (nC) | 250 |
| Qualification Level | Industrial |
| RDS (ON) (Max) @10V or 8V (mohm) | 1.06 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 0.95 |
| Series Name | REXFET-1 |
| Simulation Model Available | Yes |
| Standard Pkg. Type | TOLT |
| Tape & Reel | No |
| Thickness (mm) | 2 |
| VDSS (Max) (V) | 80 |
| VGSS (V) | 20 |
| Vgs (off) (Max) (V) | 4 |
| Width (mm) | 15 |
有关 RBE011N08R1SZPW 的资源
描述
RBE011N08R1SZPW N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 TOLT 封装。TOLT 封装采用顶部散热设计，实现超紧凑结构与卓越的散热性能。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景，是大功率和高频应用的理想选择。