特性
- 150mOhm, 700V GaN Device in PQFN 8x8 industry package
- JEDEC-qualified GaN technology
- Dynamic RDS(on)eff production tested
- Robust design, defined by:
- 800V transient over-voltage capability
- Operation with E-mode Gate drivers without the need for Zener protection
- 2kV HBM ESD rating
- Low QRR
- Reduced crossover loss
- Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:
- Increased power density
- Reduced system size and weight
- Overall reduction in system cost
描述
The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, achieving over 2kV HBM ESD rating. This device delivers superior performance, standard drive compatibility, easy adoption, and enhanced reliability.
产品参数
| 属性 | 值 |
|---|---|
| Vds min (V) | 700 |
| V(TR)DSS max (V) | 800 |
| RDSON (Typ) (mΩ) | 150 |
| RDSON (max) (mΩ) | 180 |
| Vth typ (V) | 2 |
| Id max @ 25°C (A) | 14.2 |
| Qg typ (nC) | 5.5 |
| Qoss (nC) | 27 |
| Ron * Qoss (FOM) | 4050 |
| Ciss (Typical) (pF) | 491 |
| Coss (Typical) (pF) | 27 |
| trr (Typical) (nS) | 28.6 |
| Mounting Type | Surface Mount |
| Temp. Range (°C) | -55 to +150°C |
封装选项
| Pkg. Type |
|---|
| PQFN88 |
应用
- Consumer
- Power adapters
- Low power SMPS
- Lighting
- POE Power