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3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout

封装信息

CAD 模型:View CAD Model
Pkg. Type:SOJ
Pkg. Code:PBG44
Lead Count (#):44
Pkg. Dimensions (mm):28.6 x 10.2 x 2.9
Pitch (mm):1.27

环境和出口类别

Pb (Lead) FreeYes
Moisture Sensitivity Level (MSL)3
ECCN (US)3A991.b.2.a
HTS (US)8542.32.0041

产品属性

Lead Count (#)44
Pb (Lead) FreeYes
Carrier TypeTube
Moisture Sensitivity Level (MSL)3
Access Time (ns)10
ArchitectureAsynchronous
Bus Width (bits)16
Core Voltage (V)3.3V
Density (Kb)4096
I/O Voltage (V)3.3 - 3.3
Length (mm)28.6
MOQ256
Organization256K x 16
Package Area (mm²)291.7
Pb Free Categorye3 Sn
Pitch (mm)1.27
Pkg. Dimensions (mm)28.6 x 10.2 x 2.9
Pkg. TypeSOJ
Qty. per Carrier (#)16
Qty. per Reel (#)0
Requires Terms and ConditionsDoes not require acceptance of Terms and Conditions
Tape & ReelNo
Temp. Range (°C)0 to 70°C
Thickness (mm)2.9
Width (mm)10.2
已发布No

描述

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.