特性
- Very low rDS(ON) 3.5mΩ (typical)
- Ultra-low total gate charge 19nC (typical)
- Radiation acceptance testing
- High dose rate (50-300rad(Si)/s): 100krad(Si)
- Low dose rate (0.01rad(Si)/s): 75krad(Si)
- SEE hardness (see the SEE report for details)
- SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV•cm2/mg
- Ultra-small hermetically sealed 4 Ld Surface Mount Device (SMD) package
- Package area: 42mm2
- Full military temperature range operation
- TA = -55°C to +125°C
- TJ = -55°C to +150°C
描述
The ISL70020SEH is a 40V N-channel enhancement-mode GaN power transistor. This GaN FET has been characterized for destructive Single-Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for this device include commercial aerospace, medical, and nuclear power generation. The exceptionally high electron mobility and low temperature coefficient of the GaN allow for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size. Combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high-reliability applications.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Space |
| VDS (V) | 40 |
| IDS (A) | 65 |
| VGS(TH) (Max) (V) | 2.5 |
| VGS (Max) (V) | 6 |
| RDSON (Typ) (mΩ) | 3.5 |
| Qg typ (nC) | 19 |
| Thermal Resistance θJC (°C/W) | 3.1 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 75 |
| DSEE (MeV·cm2/mg) | 86 |
| Flow | RH Hermetic |
| Qualification Level | Class Ve, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
应用方框图
 | 抗辐射 Versal 电源树 一款采用 AMD Versal 的卫星应用抗辐射电源。 |
其他应用
- Switching regulation
- Motor drives
- Relay drives
- Inrush protection
- Down hole drilling
- High reliability industrial
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