特性
- DLA SMD 5962-11212
- Output current up to 3.0A at TJ = +150°C
- Output accuracy ±1.5% over MIL temperature range
- Ultra-low dropout:
- 65mV (typical) dropout at 1.0A
- 225mV (typical) dropout at 3.0A
- SET mitigation with no added filtering/diodes
- Input supply range: 2.2V to 6.0V
- Fast load transient response
- Shutdown current of 10µA (typical)
- Output adjustable using external resistors
- PSRR 66dB (typical) at 1kHz
- Enable and power-good features
- Programmable soft-start/inrush current limiting
- Over-temp shutdown and programmable overcurrent protection (OCP) limits
- Stable with 47µF min tantalum capacitor
- Radiation hardness (ISL75051ASEH only)
- High dose rate (50 - 300rad(Si)/s): 100krad(Si)
- Low dose rate (≤0.01rad(Si)/s): 50krad(Si)
- Radiation hardness (ISL73051ASEH only)
- Low dose rate (≤0.01rad(Si)/s): 50krad(Si)
描述
The ISL75051ASEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. This device operates across an input voltage range of 2.2V to 6.0V and can provide output voltages of 0.8V to 5.0V, adjustable based on the resistor divider setting. Dropout voltages as low as 65mV can be achieved using the device. The Overcurrent Protection (OCP) pin allows the short-circuit output current limit threshold to be programmed by a resistor from the OCP pin to GND. The OCP setting range is 0.5A minimum to 8.5A maximum. The resistor sets the constant current threshold for the output under fault conditions. The thermal shutdown disables the output if the device temperature exceeds the specified value. It subsequently enters an ON/OFF cycle until the fault is removed. The enable feature allows the part to be placed into a low-current shutdown mode that typically draws about 10µA. The device is optimized for fast transient response and Single-Event Effects (SEE). This reduces the magnitude of Single-Event Transients (SET) seen on the output. Additional protection diodes and filters are not needed. These devices are stable with tantalum capacitors as low as 47µF and provide excellent regulation all the way from no load to full load. Programmable soft-start allows the user to program the inrush current by using the decoupling capacitor value on the BYP pin.
产品参数
| 属性 | 值 |
|---|---|
| Rating | Space |
| IOUT (A) | 3 |
| Supply Voltage (min) (V) | 2.2 - 2.2 |
| Supply Voltage (max) (V) | 6 - 6 |
| Input Voltage (Min) (V) | 2.2 |
| Input Voltage (Max) (V) | 6 |
| VDO @ IOUTMAX (Typ) (mV) | 225 |
| VOUT (min) (V) | 0.8 |
| VOUT (max) (V) | 5 |
| Temp. Range (°C) | -55 to +125°C |
| TID HDR (krad(Si)) | 100 |
| TID LDR (krad(Si)) | 50 |
| DSEE (MeV·cm2/mg) | 85.6, 86.3 |
| Flow | RH Hermetic |
| Qualification Level | Class V, EM |
| Die Sale Availability? | Yes |
| PROTO Availability? | Yes |
应用
- LDO regulators for space applications
- DSP, FPGA, and microprocessor core power supplies
- Post-regulation of switched-mode power supplies
- Down-hole drilling
Renesas Boards & Kits
3A, Radiation Hardened, Positive, Ultra-Low Dropout Regulator Evaluation Board
The ISL75051ASEHEV1Z evaluation board provides a simple platform to evaluate the performance of the ISL75051ASEH radiation hardened low-dropout linear regulator (LDO).
The ISL75051ASEH is a high-performance, adjustable, low-voltage, high-current, low-dropout linear regulator specified at 3A rated... 阅读详情
Radiation Hardened Power Solution for RTG4 FPGA
Over the last decade, satellites and spacecraft have seen an exponential increase in the need for onboard data processing and storage demands. Additionally, major satellite manufacturers have recently announced their latest satellites to be modular, fully digital, and capable of in-orbit... 阅读详情
Renesas Rad Hard Power Management Reference Design for AMD's Space Grade XQRKU060
Over the last decade, satellites and spacecraft have seen an exponential increase in the need for onboard data processing and storage demands. Additionally, major satellite manufacturers have recently announced their latest satellites to be modular, fully digital, and capable of in-orbit... 阅读详情
