特性
- Single 3.3V supply: 3.3V ± 0.3V
- Access time: 12ns (max)
- Completely static memory, no clock or timing strobe required
- Equal access and cycle times
- Directly TTL compatible, all inputs and outputs
- Operating current: 100mA (max)
- TTL standby current: 40mA (max)
- CMOS standby current: 5mA (max)
描述
The R1RW0408DI is a 4Mbit high-speed static RAM organized as 512-kword × 8-bit. It realizes high-speed access time by employing the CMOS process (6-transistor memory cell) and high-speed circuit design technology. It is most appropriate for applications that require high-speed, high-density memory and a wide bit width configuration, such as cache and buffer memory in systems. The R1RW0408DI is packaged in a 400-mil 36-pin SOJ for high-density surface mounting.