特性
- Universally compatible pinout and command set
- Standard block architecture
- Supports Dual I/O, Quad I/O and XiP operation
- Quad enabled at the factory
- Continuous read, wrap and burst modes for XiP
描述
The AT25QF641B is a member of our standard class code and data storage solutions designed for 3V systems in which program code is shadowed from Flash memory into embedded or external RAM for execution.
The architecture includes erase block sizes that are optimized to meet the needs of today's code and data storage applications and three security register pages for unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc
产品参数
| 属性 | 值 |
|---|---|
| Memory Class | Standard Flash |
| Memory Density | 64 |
| Operating Voltage Range (V) | 2.7 - 3.6 |
| Speed | 133 MHz |
| Interface | Quad SPI (default), Single, Dual |
| Temp. Range (°C) | -40 to +85°C |
| Deep Power Down (µA) | 1 |
| Read Current (mA) | 3.3 |
| Key Benefit | Standard features |
应用方框图
| 无线无刷电钻 无线无刷电钻设计兼具强劲动力、精准操控与智能互联特性。 | |
| 数字控制全自动意式浓缩咖啡机 AI 驱动的意式浓缩咖啡机,配备大型触摸屏和智能云连接。 |
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| Part Number | Status | Longevity | Stock | Package | Budgetary Price (USD) | Sample Catalog | Carrier Type | Moisture Sensitivity Level (MSL) | Country of Assembly |
|---|---|---|---|---|---|---|---|---|---|
| AT25QF641B-DWF | Active | 2030 Jan | Out of Stock | DWF | <a href="https://www.renesas.com/samplecomponents/scripts/samplecenter/adestotech?cmd=menu" title="Request Samples" rel="noreferrer">Request Samples</a> | 1 | |||
| AT25QF641B-MHB-T | Active | 2030 Jan | In Stock | DFN | 1ku | $0.81 | <a href="https://www.renesas.com/samplecomponents/scripts/samplecenter/adestotech?cmd=menu" title="Request Samples" rel="noreferrer">Request Samples</a> | Tape & Reel | 1 | TAIWAN |
| AT25QF641B-SHB-B | Active | 2030 Jan | Out of Stock | SOIC-W | 1ku | $0.7 | <a href="https://www.renesas.com/samplecomponents/scripts/samplecenter/adestotech?cmd=menu" title="Request Samples" rel="noreferrer">Request Samples</a> | Tube | 3 | TAIWAN |
| AT25QF641B-SHB-T | Active | 2030 Jan | In Stock | SOIC-W | 1ku | $0.7 | <a href="https://www.renesas.com/samplecomponents/scripts/samplecenter/adestotech?cmd=menu" title="Request Samples" rel="noreferrer">Request Samples</a> | Tape & Reel | 3 | TAIWAN |
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- 应用说明英语PDF 884 KB R10AN0038EU0100 Rev.1.00 2026年3月10日This application note discusses endurance and data retention in NOR Flash memory products. It describes the structure and operation of the NOR Flash transistor, the mechanisms of NOR Flash device failure and oxide degradation which limit endurance and data retention. It explains JEDEC-based test procedures for certifying endurance and data retention specifications and ways to mitigate limitations. The first part of this document and the appendix provide background for understanding the issue. The later sections describe practical scenarios of interest to most customers.
- 应用说明英语PDF 695 KB AN503 2025年9月05日Explores thermal resistance in integrated circuits (ICs) and details its role in managing heat from power consumption to ensure reliable operation. Proper thermal management enhances IC performance and longevity. Thermal resistance, measured in °C/W, quantifies heat flow resistance from the silicon die to the environment or PCB, with key types including junction-to-case (θJC), case-to-ambient (θCA), junction-to-ambient (θJA), and junction-to-board (θJB).
- 应用说明英语AI 生成的摘要: Audio playback of ADPCM data stored in NOR FLASH is achieved using the I2S master function on the RL78/G23 microcontroller. The system integrates NOR FLASH control via the Serial NOR Flash Memory Control Module Software Integration System (SIS) and uses M3S-S2-Tiny middleware for ADPCM encoding and decoding. The I2S communication supports PCM format with sampling frequencies of 8 kHz to 22.05 kHz and 16-bit data size. The document details hardware and software configurations, including pin usage, commands for writing and reading NOR FLASH, error handling, and flow charts for key functions. It also covers audio playback methods, middleware integration, and sample code for implementation.相关文件:
- 应用说明英语PDF 2.62 MB AN500 2024年2月13日AI 生成的摘要: NOR Flash memory requires an erase operation before programming, which occurs in three phases: Pre-Program, Erase, and Recovery. The erase process affects entire blocks simultaneously, not byte-by-byte. Memory cells use floating gate MOSFETs to store data, organized into arrays of rows (Word-Lines) and columns (Bit-Lines). Physical Blocks contain multiple Logical Blocks and share common p-wells and Bit-Lines, impacting operation. Smaller Logical Blocks enable improved erase performance through parallelization. Understanding these processes and potential interruptions is crucial for designing reliable systems.
- 应用说明英语PDF 710 KB AN502 2024年1月24日AI 生成的摘要: Renesas NOR flash devices require decoupling capacitors close to VCC and GND pins to stabilize voltage, typically 1 μF with an optional 100 nF capacitor. Pull-up resistors are recommended on CS#, WP#/IO2, and HOLD#/IO3 pins to ensure proper signal states and facilitate debugging. Signal routing should minimize trace length and maintain a solid ground plane for high-speed signals. Power supply must rise monotonically during power-up. Basic system bring-up involves verifying installation, voltage levels, and SPI communication using manufacturer/device ID commands. Software drivers depend on host MCU architecture; Renesas offers example drivers and support. Correct erase/program sequences include write-enable, erase/program commands, and status checks. Tools for programming include flash loader plug-ins and debug probes. Switching from single to quad-SPI involves setting the quad-enable bit, changing pin functions. Dummy cycles introduce necessary wait times during read commands to accommodate latency.
- 指南英语PDF 790 KB SPI_NOR_Flash_Product_Guide_PBFLASH03102022rev-C 2023年6月16日
- 产品变更通告英语PDF 195 KB 2023年3月06日
- 其他英语PDF 1 MB R10DS0315EU0000 Rev.0.00 2022年6月28日
- 应用说明英语PDF 794 KB 2022年5月12日AI 生成的摘要: Renesas NOR flash devices implement multiple protection methods to safeguard memory arrays, status registers, flash states, and resets from accidental or intentional modifications. Protection types include hardware-based write protection via the WP pin and software-based protection through commands controlling status registers and memory blocks. Memory array protection schemes include individual block protection, allowing sector-level lock/unlock, and memory edge protection, which protects contiguous regions aligned to memory edges. Status register protection indirectly secures memory by blocking changes to protection states. Detailed command sets and register bits configure these protections, ensuring robust flash memory integrity.
- 应用说明英语PDF 663 KB 2021年10月18日AI 生成的摘要: Proper power-up and power-down sequencing is critical for NOR Flash memory operation to ensure reliable system performance. The power supply voltage must ramp up monotonically without dips, reaching the minimum operational voltage within specified timing to avoid corrupted initialization. Reset methods, including hardware and JEDEC resets, help ensure the device starts from a known state. Brown-out conditions and power cycling require careful handling to prevent data corruption and ensure stable operation. The document covers power sequencing, reset types, brown-out recovery, power-down, and power-saving modes, providing essential guidelines for system engineers and application developers.
- 应用说明英语PDF 313 KB 2020年7月17日AI 生成的摘要: PCB design for Adesto memory devices requires careful placement of decoupling capacitors close to VCC and GND pins to minimize voltage fluctuations caused by parasitic inductance and capacitance in PCB traces. Proper capacitor selection and placement reduce signal integrity issues, EMI, and noise. Design guidelines vary by package type (SOIC, UDFN, WLCSP, BGA) and PCB layer count. Signal routing rules ensure reliable data and control signals. Special cases include parallel devices, reset signal handling, and test point integration. The document provides detailed layout recommendations for each package type to optimize device performance and reliability.
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数据手册 (1)
- 指南英语PDF 790 KB SPI_NOR_Flash_Product_Guide_PBFLASH03102022rev-C 2023年6月16日
手册和指南 (1)
- 应用说明英语PDF 884 KB R10AN0038EU0100 Rev.1.00 2026年3月10日This application note discusses endurance and data retention in NOR Flash memory products. It describes the structure and operation of the NOR Flash transistor, the mechanisms of NOR Flash device failure and oxide degradation which limit endurance and data retention. It explains JEDEC-based test procedures for certifying endurance and data retention specifications and ways to mitigate limitations. The first part of this document and the appendix provide background for understanding the issue. The later sections describe practical scenarios of interest to most customers.
- 应用说明英语PDF 695 KB AN503 2025年9月05日Explores thermal resistance in integrated circuits (ICs) and details its role in managing heat from power consumption to ensure reliable operation. Proper thermal management enhances IC performance and longevity. Thermal resistance, measured in °C/W, quantifies heat flow resistance from the silicon die to the environment or PCB, with key types including junction-to-case (θJC), case-to-ambient (θCA), junction-to-ambient (θJA), and junction-to-board (θJB).
- 应用说明英语AI 生成的摘要: Audio playback of ADPCM data stored in NOR FLASH is achieved using the I2S master function on the RL78/G23 microcontroller. The system integrates NOR FLASH control via the Serial NOR Flash Memory Control Module Software Integration System (SIS) and uses M3S-S2-Tiny middleware for ADPCM encoding and decoding. The I2S communication supports PCM format with sampling frequencies of 8 kHz to 22.05 kHz and 16-bit data size. The document details hardware and software configurations, including pin usage, commands for writing and reading NOR FLASH, error handling, and flow charts for key functions. It also covers audio playback methods, middleware integration, and sample code for implementation.相关文件:
- 应用说明英语PDF 2.62 MB AN500 2024年2月13日AI 生成的摘要: NOR Flash memory requires an erase operation before programming, which occurs in three phases: Pre-Program, Erase, and Recovery. The erase process affects entire blocks simultaneously, not byte-by-byte. Memory cells use floating gate MOSFETs to store data, organized into arrays of rows (Word-Lines) and columns (Bit-Lines). Physical Blocks contain multiple Logical Blocks and share common p-wells and Bit-Lines, impacting operation. Smaller Logical Blocks enable improved erase performance through parallelization. Understanding these processes and potential interruptions is crucial for designing reliable systems.
- 应用说明英语PDF 710 KB AN502 2024年1月24日AI 生成的摘要: Renesas NOR flash devices require decoupling capacitors close to VCC and GND pins to stabilize voltage, typically 1 μF with an optional 100 nF capacitor. Pull-up resistors are recommended on CS#, WP#/IO2, and HOLD#/IO3 pins to ensure proper signal states and facilitate debugging. Signal routing should minimize trace length and maintain a solid ground plane for high-speed signals. Power supply must rise monotonically during power-up. Basic system bring-up involves verifying installation, voltage levels, and SPI communication using manufacturer/device ID commands. Software drivers depend on host MCU architecture; Renesas offers example drivers and support. Correct erase/program sequences include write-enable, erase/program commands, and status checks. Tools for programming include flash loader plug-ins and debug probes. Switching from single to quad-SPI involves setting the quad-enable bit, changing pin functions. Dummy cycles introduce necessary wait times during read commands to accommodate latency.查看更多 (9)
应用说明和白皮书 (9)
- 产品变更通告英语PDF 195 KB 2023年3月06日
- 产品变更通告英语PDF 528 KB 2020年6月26日
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- 示例代码英语相关文件:
- Development Tool中文µISP is a compact standalone and universal solution, specifically designed for production environments, based on Algocrafts WriteNow! Technology. This is a standard tool for many families and devices and supports multi programming protocol (JTAG, SPI, UART, DAP, SWD, I2C, BDM, custom protocol, etc).提供方: Algocraft Srl
- Development Tool中文WriteNow! Series of In-System Programmers is a breakthrough in the programming industry. The programmers support a large number of devices (microcontrollers, memories, CPLDs and other programmable devices) from various manufacturers and have a compact size for easy ATE/fixture integration. They work in standalone or connected to a ...提供方: Algocraft Srl
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- Development Tool中文µISP is a compact standalone and universal solution, specifically designed for production environments, based on Algocrafts WriteNow! Technology. This is a standard tool for many families and devices and supports multi programming protocol (JTAG, SPI, UART, DAP, SWD, I2C, BDM, custom protocol, etc).提供方: Algocraft Srl
- Development Tool中文WriteNow! Series of In-System Programmers is a breakthrough in the programming industry. The programmers support a large number of devices (microcontrollers, memories, CPLDs and other programmable devices) from various manufacturers and have a compact size for easy ATE/fixture integration. They work in standalone or connected to a ...提供方: Algocraft Srl