特性
- VDSS = 100V
- 标准栅极驱动电压：VGS(th) = 2.0~4.0V
- 低导通电阻：RDS(on) = 11.1mΩ（最大值）
- ID = 40A
- 低输入电容
- 低热阻
- 封装：μSO8-FL (3x3)
- 100% 通过雪崩测试
- 无铅电镀：符合 RoHS 标准
- MSL1(依据IPC/JEDEC J-STD-020)
RBE111N10R1SZN2 Outline
描述
RBE111N10R1SZN2 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术，提供 μSO8-FL(3x3) 封装。相较于传统DPAK，超紧凑封装尺寸减少约90%，有助于节省电路板空间并提升设计灵活性。此外，其采用可润湿侧翼引脚，提供卓越的可焊性并支持可靠的光学检测。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关性能的场景，是大功率和高频应用的理想选择。
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Industrial |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | μSO8-FL 3x3 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 100 |
| ID (A) | 40 |
| RDS (ON) (Max) @10V (mohm) | 11.1 |
| Pch (W) | 57 |
| Ciss (Typical) (pF) | 1700 |
| Qg typ (nC) | 27 |
| Series Name | REXFET-1 |
封装选项
| Pkg. Type | Lead Count (#) |
|---|---|
| uSO8-FL | 8 |
应用方框图
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| 器件号 | 状态 | 样品 | 库存 | RoHS | 封装 | 预算价格（美元） | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free |
|---|---|---|---|---|---|---|---|---|---|---|
| RBE111N10R1SZN2#HB0 | Active | Available | 有库存 | RoHS:EN RoHS:JA | uSO8-FL | 1ku | $0.354 | 8# | Embossed Tape | 1 | Yes |
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- 应用说明英语PDF 599 KB R07AN0052EJ0100 Rev.1.00 2026年5月27日REXFET PLECS models enable accurate simulation of power MOSFET behavior, including electrical and thermal characteristics. The model integrates channel and body diode behavior, supports configurable simulation parameters, and provides probe functions for switching, conduction, and temperature analysis. This application note outlines installation, library integration, model configuration, and usage considerations to optimize simulation results.相关文件：
- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 数据手册英语RBE111N10R1SZN2 DatasheetRECOMMENDEDPDF 466 KB R07DS1633EJ0101 Rev.1.01 2026年4月03日The RBE111N10R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features an ultra-compact, leadless design with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly. Renesas' split-gate technology is well-suited for applications requiring low RDS(on) and high switching performance in high-power, high-frequency environments.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
- 白皮书英语PDF 4.45 MB R16WP0011EU0100 Rev.1.00 2025年11月04日High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
- 应用说明英语PDF 722 KB R07AN0040EJ0100 Rev.1.00 2024年11月13日AI 生成的摘要: 48V automotive electrical systems enhance power capacity and efficiency by reducing current and cable size, enabling lighter and more compact vehicle designs. Renesas develops the REXFET-1 series MOSFETs with advanced wafer and package technologies, achieving ultra-low ON-resistance and high reliability for middle-voltage applications. The TOLL and TOLG packages optimize thermal performance, EMI behavior, and space, supporting up to 300A current. These MOSFETs meet automotive standards, improve switching efficiency, and reduce heat dissipation, facilitating the demands of electric and hybrid vehicles' powertrains and auxiliary systems.
- 应用说明英语AI 生成的摘要: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
- 应用说明英语AI 生成的摘要: Absolute maximum ratings define safe operational limits for MOSFETs, including voltage, current, and temperature thresholds to prevent device damage. Electrical characteristics specify parameters like breakdown voltage, threshold voltage, on-resistance, capacitances, and switching times. Allowable channel dissipation decreases as case temperature rises, calculated by a specific formula. The safe operating area (SOA) outlines five limiting conditions: current rating, on-resistance, channel dissipation, secondary breakdown, and voltage rating, ensuring reliable MOSFET operation under various conditions.
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推荐文档 (2)
- 数据手册英语RBE111N10R1SZN2 DatasheetRECOMMENDEDPDF 466 KB R07DS1633EJ0101 Rev.1.01 2026年4月03日The RBE111N10R1SZN2 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a 3x3 μSO8-FL package. The μSO8-FL package features an ultra-compact, leadless design with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly. Renesas' split-gate technology is well-suited for applications requiring low RDS(on) and high switching performance in high-power, high-frequency environments.
数据手册 (1)
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
手册和指南 (1)
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- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 白皮书英语PDF 4.45 MB R16WP0011EU0100 Rev.1.00 2025年11月04日High-power, high-efficiency systems such as electric motor drives and battery management systems continue to see rapid adoption and increasing power demands. To address these requirements, lower on-resistance and improved switching performance are needed. This paper presents an advanced split-gate trench process and next-generation MOSFETs with a 30% reduction in specific on-resistance to meet these needs.
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