特性
- VDSS = 80V
- 标准栅极驱动电压: VGS（th） = 2.0V 至 4.0V
- 超低导通电阻：RDS（on） = 5.6mΩ (最大值)
- ID = 90A
- 低输入电容
- 低热阻
- 符合 AEC-Q101 标准
- 支持PPAP(生产件批准程序)
- 无铅电镀：符合 RoHS 标准
- MSL1（依据IPC/JEDEC J-STD-020）
RBA90N08EANS-4UA06 Outline
描述
RBA90N08EANS-4UA06 N 沟道功率 MOSFET 采用 REXFET-1 分离栅技术, 提供 SO8-FL (5x6) 封装。 SO8-FL(5x6) 封装采用超紧凑无引脚设计和可润湿侧翼结构，可增强热性能和可靠性并提高组装的便利性。
瑞萨电子的 REXFET-1 分离栅技术非常适合需要低 RDS(on) 和重视开关能力的场景，是大功率和高频应用的理想选择。
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 1 |
| Standard Pkg. Type | SO8-FL 5x6 BSC |
| Gate Level | Standard |
| VDSS (Max) (V) | 80 |
| ID (A) | 90 |
| RDS (ON) (Max) @10V (mohm) | 5.6 |
| Pch (W) | 100 |
| Ciss (Typical) (pF) | 3100 |
| Qg typ (nC) | 47 |
| Series Name | REXFET-1 |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| SO8-FL | 5.15 x 6.10 x 1.00 | 8 |
产品对比
| RBA90N08EANS-4UA06 | RBE056N08R1SZN6 | |
| VDSS (Max) (V) | 80 | 80 |
| RDS (ON) (Max) @10V (mohm) | 5.6 | 5.6 |
| ID (A) | 90 | 90 |
| Standard Pkg. Type | SO8-FL 5x6 BSC | SO8-FL 5x6 BSC |
| Qualification Level | Automotive | Industrial |
应用方框图
 | 多合一电动汽车单元 可实现高效电机控制、充电和 DC/DC 转换的集成式多合一电动汽车电源系统。 |
其他应用
- DC/DC 车载充电
- Zone ECUs
- 电机控制
- 电池管理系统 (BMS)
- 风扇
- 泵
- 电动座椅
- 天窗
- 电动助力转向系统 (EPS)
- 电动驻车制动器 (EPB)
- 电动压缩机
- 开关
- LED照明
完成您的设计
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| 器件号 | 状态 | 样品 | 库存 | RoHS | 封装 | 预算价格（美元） | Lead Count (#) | Carrier Type | Moisture Sensitivity Level (MSL) | Pb (Lead) Free |
|---|---|---|---|---|---|---|---|---|---|---|
| RBA90N08EANS-4UA06#HB0 | Active | Available | 缺货 | RoHS:EN RoHS:JA | SO8-FL | 1ku | $0.468 | 8# | Embossed Tape | 1 | Yes |
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加载中
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- 应用说明英语PDF 596 KB R07AN0051EJ0100 Rev.1.00 2026年4月27日Compares the thermal performance of automotive power MOSFETs in the TOLL (TO-Leadless) package and its derivatives, including the TOLT (TO-Leaded Top-side Cooling) package. The information presented in this document is intended to serve as a comprehensive guideline for designing high-power automotive systems.
- 数据手册英语RBA90N08EANS-4UA06 DatasheetRECOMMENDEDPDF 449 KB R07DS1645EJ0101 Rev.1.01 2026年4月16日The RBA90N08EANS-4UA06 N-channel power MOSFET features REXFET-1 split-gate technology and is available in an ultra-compact 5x6 SO8-FL package. This leadless package incorporates wettable flanks, enabling enhanced thermal performance, improved reliability, and simplified assembly. Renesas' split-gate technology is well-suited for applications that demand low RDS(on) and high switching performance in high-power, high-frequency environments.
- 应用说明英语PDF 936 KB R07AN0050EJ0100 Rev.1.00 2025年12月03日Measurement frequency and the influence of parasitic inductance are crucial in capacitance measurements for Power MOSFETs. Split-gate structures, with their low Crss and higher Ciss, face challenges from parasitic inductance, making high-frequency measurements difficult. In contrast, standard-gate trench structures allow relatively accurate results. The influence of parasitic inductance in actual measurements is examined from various perspectives.
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
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- 应用说明英语AI 生成的摘要: Parallel connection of power MOSFETs requires careful management of current balance to prevent device damage. During conduction, differences in RDS(on) and wiring resistance cause current imbalance, which can be mitigated by selecting devices from the same lot and symmetrical layout design. During switching, variations in VGS(th) and inductance lead to transient current imbalance, necessitating similar countermeasures. Avalanche operation risks concentrating current on weaker devices. Parasitic oscillations occur more frequently in parallel configurations due to resonant circuits formed by gate and drain inductances and capacitances, which can be suppressed by adding gate resistors.
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推荐文档 (2)
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数据手册 (1)
- 指南英语PDF 988 KB R07ZZ0016EJ0100 Rev.1.00 2025年12月03日The diagrams in this document show the recommended mounting pad layout dimensions for Renesas Power MOSFETs. In actual PCB design, optimization should consider mounting density, mountability, dimensional tolerances, and other relevant factors.
手册和指南 (1)
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新闻和博客
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2025年10月29日
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