特性
- Logic level operation (4 V Gate drive).
- Built-in the over temperature shut-down circuit.
- High endurance capability against to the short circuit.
- Latch type shut down operation (need 0 voltage recovery).
- Built-in the current limitation circuit.
- High density mounting
- Power supply voltage applies 12 V.
- AEC-Q101 Compliant
描述
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. .
产品参数
| 属性 | 值 |
|---|---|
| Qualification Level | Automotive |
| Nch/Pch | Nch |
| Channels (#) | 2 |
| Standard Pkg. Type | SOP-8 / SOIC-8 |
| VDSS (Max) (V) | 40 |
| ID (A) | 5 |
| RDS (ON) (Max) @10V or 8V (mohm) | 86 |
| RDS (ON) (Typical) @ 10V / 8V (mohm) | 70 |
| Pch (W) | 1.5 |
| Mounting Type | Surface Mount |
| Function | Thermal FETs |
封装选项
| Pkg. Type | Pkg. Dimensions (mm) | Lead Count (#) |
|---|---|---|
| SOP | 5 x 4 x 1.75 | 8 |
应用方框图
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